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SI1427EDH-T1-GE3
Power MOSFET, P Channel, 20 V, 2 A, 0.064 ohm, SOT-363, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1427EDH-T1-GE3
Newark Part No.70AC6488
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2A
On Resistance Rds(on)0.05ohm
Drain Source On State Resistance0.064ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2.8W
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max400mV
Power Dissipation2.8W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
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Product Overview
The SI1427EDH-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- 2000V ESD performance
- Built in ESD protection with Zener diode
- 100% Rg tested
- -55 to 150°C Operating temperature range
- Halogen-free
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.05ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.8W
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
2A
Drain Source On State Resistance
0.064ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-363
Power Dissipation
2.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability