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SI1480DH-T1-GE3
MOSFET Transistor, N Channel, 2.6 A, 100 V, 0.161 ohm, 10 V, 1.6 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $0.716 |
| 10+ | $0.562 |
| 25+ | $0.519 |
| 50+ | $0.477 |
| 100+ | $0.434 |
| 500+ | $0.384 |
| 1000+ | $0.352 |
Price for:Each
Minimum: 5
Multiple: 5
$3.58
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1480DH-T1-GE3
Newark Part No.19X1958
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.2ohm
On Resistance Rds(on)0.161ohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation Pd2.8W
Power Dissipation2.8W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.2ohm
Transistor Case Style
SOT-363
Rds(on) Test Voltage
10V
Power Dissipation Pd
2.8W
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
2.6A
On Resistance Rds(on)
0.161ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
Power Dissipation
2.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability