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SI1967DH-T1-BE3
Dual MOSFET, P Channel, 20 V, 1.3 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1967DH-T1-BE3
Newark Part No.36AJ8061
Product RangeTrenchFET Series
Technical Datasheet
4,139 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.139 |
| 10+ | $0.139 |
| 25+ | $0.139 |
| 50+ | $0.139 |
| 100+ | $0.139 |
| 250+ | $0.139 |
| 500+ | $0.139 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.14
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1967DH-T1-BE3
Newark Part No.36AJ8061
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id1.3A
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel1.3A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.39ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Alternatives for SI1967DH-T1-BE3
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Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
1.3A
Continuous Drain Current Id P Channel
1.3A
Drain Source On State Resistance P Channel
0.39ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
TrenchFET Series
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SC-70
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability