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| Quantity | Price |
|---|---|
| 1+ | $0.087 |
| 10+ | $0.087 |
| 25+ | $0.087 |
| 50+ | $0.087 |
| 100+ | $0.087 |
| 250+ | $0.087 |
| 500+ | $0.087 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.09
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2304DDS-T1-GE3
Newark Part No.23T8495
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.6A
Drain Source On State Resistance0.06ohm
On Resistance Rds(on)0.049ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation Pd1.7W
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
- 30V, 3.6A N-channel TrenchFET® power MOSFET in 3 pin TO-236 package
- 100 % Rg tested
- Suitable for DC/DC converter application
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.06ohm
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.7W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
3.6A
On Resistance Rds(on)
0.049ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate