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SI2308BDS-T1-E3
Power MOSFET, N Channel, 60 V, 2.3 A, 0.156 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-E3Copy
Manufacturer Standard Lead Time8 weeks
Newark Part No.
Re-Reel69W7187
Cut Tape69W7187
Your Part Number
52,495 In Stock
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-E3Copy
Manufacturer Standard Lead Time8 weeks
Newark Part No.
Re-Reel69W7187
Cut Tape69W7187
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.156ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation1.66W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI2308BDS-T1-E3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for battery switch and DC-to-DC converter applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.66W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.156ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate