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Available to Order
Manufacturer Standard Lead Time: 8 week(s)
Quantity | Price |
---|---|
3000+ | $0.274 |
6000+ | $0.260 |
12000+ | $0.241 |
18000+ | $0.233 |
30000+ | $0.223 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$822.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-GE3
Newark Part No.71T8044
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.156ohm
On Resistance Rds(on)0.13ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Power Dissipation Pd1.09W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3V
Power Dissipation1.09W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2308BDS-T1-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for battery switch and DC-to-DC converter applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.156ohm
Transistor Case Style
TO-236
Power Dissipation Pd
1.09W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.3A
On Resistance Rds(on)
0.13ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
20V
Power Dissipation
1.09W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate