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SI2312CDS-T1-BE3
Power MOSFET, N Channel, 20 V, 6 A, 0.0318 ohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2312CDS-T1-BE3Copy
Manufacturer Standard Lead Time27 weeks
Newark Part No.42AJ0559
Product RangeTrenchFET Series
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2312CDS-T1-BE3Copy
Manufacturer Standard Lead Time27 weeks
Newark Part No.42AJ0559
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6A
Drain Source On State Resistance0.0318ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation2.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6A
Transistor Case Style
TO-236
Rds(on) Test Voltage
4.5V
Power Dissipation
2.1W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0318ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
TrenchFET Series
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
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