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SI2342DS-T1-GE3
Power MOSFET, N Channel, 8 V, 6 A, 0.017 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.837 |
| 25+ | $0.604 |
| 50+ | $0.551 |
| 100+ | $0.498 |
| 250+ | $0.448 |
| 500+ | $0.397 |
| 1000+ | $0.363 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2342DS-T1-GE3
Newark Part No.70AC6495
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id6A
On Resistance Rds(on)0.014ohm
Drain Source On State Resistance0.017ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2.5W
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max800mV
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
- TrenchFET® Power MOSFET
- 100% Rg Tested
- Built-in ESD Protection - Typical ESD Performance 3000V
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
8V
On Resistance Rds(on)
0.014ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
800mV
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
0.017ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
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Product Compliance Certificate
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