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SI3407DV-T1-GE3
Power MOSFET, P Channel, 20 V, 8 A, 0.024 ohm, TSOP, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.626 |
| 10+ | $0.456 |
| 25+ | $0.427 |
| 50+ | $0.398 |
| 100+ | $0.369 |
| 250+ | $0.345 |
| 500+ | $0.321 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3407DV-T1-GE3
Newark Part No.35R6207
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id8A
Drain Source On State Resistance0.024ohm
On Resistance Rds(on)0.02ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Power Dissipation Pd2W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation2W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.024ohm
Transistor Case Style
TSOP
Power Dissipation Pd
2W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.02ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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