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ManufacturerVISHAY
Manufacturer Part NoSI4103DY-T1-GE3
Newark Part No.56AC6585
Product RangeTrenchFET Gen III
Technical Datasheet
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Quantity | Price |
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1+ | $1.520 |
10+ | $1.150 |
25+ | $1.030 |
50+ | $0.916 |
100+ | $0.802 |
250+ | $0.729 |
500+ | $0.654 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4103DY-T1-GE3
Newark Part No.56AC6585
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id16A
Drain Source On State Resistance0.0067ohm
On Resistance Rds(on)0.0067ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd5.2W
Power Dissipation5.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0067ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
5.2W
No. of Pins
8Pins
Product Range
TrenchFET Gen III
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.0067ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
5.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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