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SI4401BDY-T1-GE3
Power MOSFET, P Channel, 40 V, 8.7 A, 0.014 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 500+ | $1.340 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$3,350.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4401BDY-T1-GE3
Newark Part No.69W7197
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id8.7A
Drain Source On State Resistance0.014ohm
On Resistance Rds(on)0.011ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.5W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4401BDY-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.014ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.5W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
8.7A
On Resistance Rds(on)
0.011ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
Power Dissipation
1.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate