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SI4431CDY-T1-GE3
Power MOSFET, P Channel, 30 V, 9 A, 0.032 ohm, SOIC, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 33 week(s)
| Quantity | Price |
|---|---|
| 2000+ | $0.550 |
| 4000+ | $0.494 |
| 6000+ | $0.477 |
| 10000+ | $0.465 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,375.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4431CDY-T1-GE3
Newark Part No.29X0533
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id9A
Drain Source On State Resistance0.032ohm
On Resistance Rds(on)0.026ohm
Transistor MountingSurface Mount
Power Dissipation Pd4.2W
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
Power Dissipation4.2W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
SI4431CDY-T1-GE3 is a single, P-channel 30V (D-S) MOSFET suitable for load switch and battery switch.
- TrenchFET® power MOSFET
- 100% Rg tested
- VDS is -30V, 0.032ohm RDS(on) max at VGS = -10V
- ±20V gate-source voltage
- 4.2W maximum power dissipation at TC = 25°C
- Pulsed drain current IDM is -30A
- Operating temperature range -55 to 150°C
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.032ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
9A
On Resistance Rds(on)
0.026ohm
Power Dissipation Pd
4.2W
Transistor Case Style
SOIC
Power Dissipation
4.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate