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Available to Order
Manufacturer Standard Lead Time: 23 week(s)
Quantity | Price |
---|---|
1+ | $0.466 |
5000+ | $0.456 |
10000+ | $0.423 |
20000+ | $0.395 |
30000+ | $0.370 |
50000+ | $0.356 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,165.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4435DDY-T1-GE3
Newark Part No.15R5017
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8.1A
On Resistance Rds(on)0.0195ohm
Drain Source On State Resistance0.024ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The SI4435DDY-T1-GE3 is a -30V P-channel TrenchFET® Power MOSFET with advance high density process. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0195ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
8.1A
Drain Source On State Resistance
0.024ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate