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| Quantity | Price |
|---|---|
| 1+ | $2.780 |
| 10+ | $1.950 |
| 25+ | $1.740 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4455DY-T1-GE3
Newark Part No.57AJ0441
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id2.8A
Drain Source On State Resistance0.245ohm
On Resistance Rds(on)0.245ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd5.9W
Power Dissipation5.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.245ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
5.9W
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
2.8A
On Resistance Rds(on)
0.245ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
5.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SI4455DY-T1-GE3
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability