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SI4850EY-T1-E3
Power MOSFET, N Channel, 60 V, 8.5 A, 0.022 ohm, SOIC, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $2.990 |
| 10+ | $2.870 |
| 25+ | $2.690 |
| 50+ | $2.460 |
| 100+ | $2.240 |
| 250+ | $2.010 |
| 500+ | $1.780 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4850EY-T1-E3
Newark Part No.06J7915
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8.5A
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.018ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.3W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOIC
Power Dissipation3.3W
No. of Pins8Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
The SI4850EY-T1-E3 is a TrenchFET® N-channel enhancement-mode Power MOSFET with reduced total dynamic gate charge (Qg).
- Fast switching
- 175°C Maximum junction temperature
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
8.5A
On Resistance Rds(on)
0.018ohm
Power Dissipation Pd
3.3W
Gate Source Threshold Voltage Max
1V
Power Dissipation
3.3W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability