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SI4943CDY-T1-GE3
Dual MOSFET, Dual P Channel, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $3.740 |
| 10+ | $2.410 |
| 25+ | $2.160 |
| 50+ | $1.910 |
| 100+ | $1.640 |
| 500+ | $1.320 |
| 1000+ | $1.210 |
| 2500+ | $1.150 |
Price for:Each
Minimum: 1
Multiple: 1
$3.74
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4943CDY-T1-GE3Copy
Newark Part No.97W2664
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.0275ohm
Drain Source On State Resistance P Channel0.0275ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
0.0275ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.0275ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability