Print Page
Image is for illustrative purposes only. Please refer to product description.

ManufacturerVISHAY
Manufacturer Part NoSI6562CDQ-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.97W2679
Your Part Number
10,775 In Stock
24,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.960 |
| 10+ | $0.926 |
| 100+ | $0.826 |
| 500+ | $0.792 |
| 1000+ | $0.760 |
| 2500+ | $0.727 |
| 10000+ | $0.694 |
Price for:Each
Minimum: 1
Multiple: 1
$1.96
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6562CDQ-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.97W2679
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id6.7A
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel6.7A
Continuous Drain Current Id P Channel6.7A
Drain Source On State Resistance N Channel0.18ohm
Drain Source On State Resistance P Channel0.18ohm
Transistor Case StyleTSSOP
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI6562CDQ-T1-GE3 is a N/P-channel MOSFET housed in a surface-mount package. It is suitable for load switch and DC-to-DC converter applications.
- TrenchFET® power MOSFET
- 20V drain source voltage Vds P channel and 20V drain source voltage Vds N
- 6.7A continuous drain current
- 8 pin TSSOP package
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
6.7A
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
6.7A
Drain Source On State Resistance P Channel
0.18ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.6W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
6.7A
Drain Source On State Resistance N Channel
0.18ohm
Transistor Case Style
TSSOP
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Alternatives for SI6562CDQ-T1-GE3
2 Products Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
