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SI7106DN-T1-GE3
Power MOSFET, N Channel, 20 V, 19.5 A, 0.0062 ohm, PowerPAK 1212, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 24 week(s)
| Quantity | Price |
|---|---|
| 50+ | $1.960 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$5,880.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7106DN-T1-GE3
Newark Part No.12R3254
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id19.5A
On Resistance Rds(on)0.0062ohm
Drain Source On State Resistance0.0062ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.8W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Transistor Case StylePowerPAK 1212
Power Dissipation3.8W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0062ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
19.5A
Drain Source On State Resistance
0.0062ohm
Power Dissipation Pd
3.8W
Gate Source Threshold Voltage Max
600mV
Power Dissipation
3.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate