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SI7114ADN-T1-GE3
Power MOSFET, N Channel, 30 V, 18.3 A, 0.0075 ohm, PowerPAK 1212, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 34 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.593 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,779.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7114ADN-T1-GE3
Newark Part No.16P3822
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id18.3A
On Resistance Rds(on)0.01ohm
Drain Source On State Resistance0.0075ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.7W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3V
Transistor Case StylePowerPAK 1212
Power Dissipation3.7W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.01ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
20V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
18.3A
Drain Source On State Resistance
0.0075ohm
Power Dissipation Pd
3.7W
Gate Source Threshold Voltage Max
3V
Power Dissipation
3.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate