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Available to Order
Manufacturer Standard Lead Time: 11 week(s)
| Quantity | Price |
|---|---|
| 2000+ | $0.653 |
| 4000+ | $0.586 |
| 6000+ | $0.566 |
| 10000+ | $0.553 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,959.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7119DN-T1-GE3
Newark Part No.33P5381
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id3.8A
On Resistance Rds(on)0.86ohm
Drain Source On State Resistance1.05ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage6V
Power Dissipation Pd3.7W
Transistor Case StylePowerPAK 1212
Gate Source Threshold Voltage Max4V
Power Dissipation3.7W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI7119DN-T1-GE3 is a 200VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for active clamp in intermediate DC-to-DC power supplies applications.
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -50 to 150°C Operating temperature range
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.86ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.7W
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
3.8A
Drain Source On State Resistance
1.05ohm
Rds(on) Test Voltage
6V
Transistor Case Style
PowerPAK 1212
Power Dissipation
3.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate