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SI7465DP-T1-GE3
Power MOSFET, P Channel, 60 V, 5 A, 0.064 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 11 week(s)
| Quantity | Price |
|---|---|
| 100+ | $1.030 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$3,090.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7465DP-T1-GE3
Newark Part No.26R1926
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id5A
On Resistance Rds(on)0.051ohm
Drain Source On State Resistance0.064ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.5W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max3V
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The SI7465DP-T1-GE3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.051ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.5W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
5A
Drain Source On State Resistance
0.064ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK SO
Power Dissipation
1.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate