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SI7469DP-T1-GE3
Power MOSFET, P Channel, 80 V, 28 A, 0.025 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 11 week(s)
| Quantity | Price |
|---|---|
| 2000+ | $2.010 |
| 4000+ | $1.820 |
| 6000+ | $1.760 |
| 10000+ | $1.710 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$6,030.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7469DP-T1-GE3
Newark Part No.15R5209
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id28A
On Resistance Rds(on)0.029ohm
Drain Source On State Resistance0.025ohm
Transistor MountingSurface Mount
Power Dissipation Pd5.2W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max3V
Transistor Case StylePowerPAK SO
Power Dissipation5.2W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The SI7469DP-T1-GE3 is a 80VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- Halogen-free
- -55 to 150°C Operating temperature range
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.029ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
28A
Drain Source On State Resistance
0.025ohm
Power Dissipation Pd
5.2W
Gate Source Threshold Voltage Max
3V
Power Dissipation
5.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate