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SI7625DN-T1-GE3.
Power MOSFET, P Channel, 30 V, 35 A, 0.0088 ohm, PowerPAK 1212, Surface Mount
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| Quantity | Price |
|---|---|
| 2000+ | $0.708 |
| 4000+ | $0.636 |
| 6000+ | $0.613 |
| 10000+ | $0.599 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$2,124.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7625DN-T1-GE3.
Newark Part No.30AC0201
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0088ohm
Drain Source On State Resistance0.0088ohm
Transistor MountingSurface Mount
Power Dissipation Pd52W
Rds(on) Test Voltage4.5V
Transistor Case StylePowerPAK 1212
Gate Source Threshold Voltage Max1V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0088ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.0088ohm
Power Dissipation Pd
52W
Transistor Case Style
PowerPAK 1212
Power Dissipation
52W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate