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SI7812DN-T1-E3
Power MOSFET, N Channel, 75 V, 16 A, 0.037 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 100+ | $1.760 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$5,280.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7812DN-T1-E3
Newark Part No.85W3224
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id16A
Drain Source On State Resistance0.037ohm
On Resistance Rds(on)0.031ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd3.8W
Transistor Case StylePowerPAK 1212
Gate Source Threshold Voltage Max2.3V
Power Dissipation3.8W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The SI7812DN-T1-E3 is a 75VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch applications.
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.037ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.8W
Gate Source Threshold Voltage Max
2.3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.031ohm
Rds(on) Test Voltage
20V
Transistor Case Style
PowerPAK 1212
Power Dissipation
3.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate