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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI8472DB-T2-E1
Newark Part No.57AJ0477
Product RangeTrenchFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.036ohm
On Resistance Rds(on)0.036ohm
Transistor Case StyleMICRO FOOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation Pd1.8W
Power Dissipation1.8W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.036ohm
Transistor Case Style
MICRO FOOT
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
1.8W
No. of Pins
4Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.036ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SI8472DB-T2-E1
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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Product Compliance Certificate
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