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SIA436DJ-T1-GE3
Power MOSFET, N Channel, 8 V, 12 A, 0.0094 ohm, PowerPAK SC-70, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.404 |
| 5000+ | $0.395 |
| 10000+ | $0.365 |
| 20000+ | $0.340 |
| 30000+ | $0.317 |
| 50000+ | $0.304 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,212.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA436DJ-T1-GE3
Newark Part No.99W9414
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id12A
Drain Source On State Resistance0.0094ohm
On Resistance Rds(on)0.0078ohm
Transistor Case StylePowerPAK SC-70
Transistor MountingSurface Mount
Power Dissipation Pd19W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max350mV
Power Dissipation19W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- N-channel 8V (D-S) TrenchFET® power MOSFET
- Thermally enhanced PowerPAK® SC-70 package
- 100 % Rg tested
- Used in load switch for portable applications such as smart phones, tablet PCs and mobile computing
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.0094ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation Pd
19W
Gate Source Threshold Voltage Max
350mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.0078ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
19W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate