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| Quantity | Price |
|---|---|
| 1+ | $3.080 |
| 10+ | $2.210 |
| 25+ | $2.050 |
| 50+ | $1.870 |
| 100+ | $1.780 |
| 500+ | $1.710 |
| 1000+ | $1.670 |
Price for:Each
Minimum: 1
Multiple: 1
$3.08
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHD4N80E-GE3
Newark Part No.78AC6519
Product RangeE
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4.3A
On Resistance Rds(on)1.1ohm
Drain Source On State Resistance1.27ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd69W
Gate Source Threshold Voltage Max4V
Power Dissipation69W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
1.1ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
4.3A
Drain Source On State Resistance
1.27ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
69W
Power Dissipation
69W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate