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SIHG30N60E-GE3
Power MOSFET, N Channel, 29 A, 600 V, 0.
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIHG30N60E-GE3Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.19X1940
Your Part Number
401 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $11.350 |
| 10+ | $10.220 |
| 25+ | $9.610 |
| 50+ | $8.960 |
| 100+ | $8.160 |
| 500+ | $7.590 |
| 1000+ | $6.900 |
| 2500+ | $6.540 |
Price for:Each
Minimum: 1
Multiple: 1
$11.35
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHG30N60E-GE3Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.19X1940
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id29A
Drain Source On State Resistance0.125ohm
On Resistance Rds(on)0.104ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation250W
Power Dissipation Pd250W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.125ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
250W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
29A
On Resistance Rds(on)
0.104ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
250W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Alternatives for SIHG30N60E-GE3
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate