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SIR826BDP-T1-RE3
Power MOSFET, N Channel, 80 V, 80.8 A, 0.0051 ohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIR826BDP-T1-RE3
Newark Part No.99AC0540
Product RangeTrenchFET Gen IV Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR826BDP-T1-RE3
Newark Part No.99AC0540
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id80.8A
Drain Source On State Resistance0.0051ohm
On Resistance Rds(on)0.00435ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Power Dissipation Pd83W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation83W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0051ohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
83W
Gate Source Threshold Voltage Max
3.8V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
80.8A
On Resistance Rds(on)
0.00435ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate