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SIS410DN-T1-GE3
MOSFET, N-CH, 20V, 35A, POWERPAK8
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIS410DN-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.55R1905
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 39 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.600 |
| 10+ | $2.090 |
| 25+ | $1.940 |
| 50+ | $1.780 |
| 100+ | $1.620 |
| 500+ | $1.450 |
| 1000+ | $1.290 |
| 2500+ | $1.210 |
Price for:Each
Minimum: 1
Multiple: 1
$2.60
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS410DN-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.55R1905
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id35A
On Resistance Rds(on)0.004ohm
Drain Source On State Resistance4800µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Power Dissipation Pd5.2W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation5.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.004ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation Pd
5.2W
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
4800µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
5.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Alternatives for SIS410DN-T1-GE3
4 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate