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SIS415DNT-T1-GE3
MOSFET, P-CH, 20V, 35A, POWERPAK 1212-8S ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSIS415DNT-T1-GE3
Newark Part No.57AJ0412
Product RangeTrenchFET Gen III
Technical Datasheet
1,626 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.440 |
| 10+ | $0.986 |
| 25+ | $0.904 |
| 50+ | $0.822 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS415DNT-T1-GE3
Newark Part No.57AJ0412
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0033ohm
Drain Source On State Resistance4000µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation52W
Power Dissipation Pd52W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0033ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
No. of Pins
8Pins
Product Range
TrenchFET Gen III
SVHC
Lead (21-Jan-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
4000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
52W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability