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ManufacturerVISHAY
Manufacturer Part NoSISC06DN-T1-GE3
Newark Part No.81AC2793
Product RangeTrenchFET Gen IV
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 30 week(s)
Quantity | Price |
---|---|
1+ | $1.060 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.06
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISC06DN-T1-GE3
Newark Part No.81AC2793
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id40A
Drain Source On State Resistance0.0027ohm
On Resistance Rds(on)0.0022ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd46.3W
Gate Source Threshold Voltage Max2.1V
Power Dissipation46.3W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0027ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.1V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
40A
On Resistance Rds(on)
0.0022ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
46.3W
Power Dissipation
46.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Alternatives for SISC06DN-T1-GE3
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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