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SISS12DN-T1-GE3
MOSFET, N-CH, 40V, 60A, 150DEG C, 65.7W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS12DN-T1-GE3
Newark Part No.81AC2796
Product RangeTrenchFET Gen IV
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.730 |
| 10+ | $1.840 |
| 25+ | $1.670 |
| 50+ | $1.490 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS12DN-T1-GE3
Newark Part No.81AC2796
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id60A
Drain Source On State Resistance1980µohm
On Resistance Rds(on)0.00161ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation Pd65.7W
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1980µohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation Pd
65.7W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.00161ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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