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SISS27ADN-T1-GE3
MOSFET, P-CH, 30V, 50A, POWERPAK 1212-8S ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSISS27ADN-T1-GE3
Newark Part No.57AJ0408
Product RangeTrenchFET Gen III
Technical Datasheet
19,780 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.620 |
| 25+ | $1.420 |
| 100+ | $1.140 |
| 500+ | $1.010 |
| 1000+ | $0.772 |
| 2500+ | $0.738 |
| 5000+ | $0.709 |
| 10000+ | $0.701 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.62
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS27ADN-T1-GE3
Newark Part No.57AJ0408
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id50A
Drain Source On State Resistance5100µohm
On Resistance Rds(on)0.0042ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation57W
Power Dissipation Pd57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
5100µohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
57W
No. of Pins
8Pins
Product Range
TrenchFET Gen III
SVHC
Lead (21-Jan-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.0042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
57W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability