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SISS46DN-T1-GE3
MOSFET, N-CH, 100V, 45.3A, 150DEG C
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ManufacturerVISHAY
Manufacturer Part NoSISS46DN-T1-GE3
Newark Part No.99AC9592
Product RangeTrenchFET Gen IV
Technical Datasheet
14,081 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $3.200 |
| 25+ | $2.810 |
| 100+ | $2.260 |
| 500+ | $1.990 |
| 1000+ | $1.530 |
| 2500+ | $1.460 |
| 5000+ | $1.410 |
| 10000+ | $1.390 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.20
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS46DN-T1-GE3
Newark Part No.99AC9592
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id45.3A
On Resistance Rds(on)0.0106ohm
Drain Source On State Resistance0.0128ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Power Dissipation Pd65.7W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.4V
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0106ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation Pd
65.7W
Gate Source Threshold Voltage Max
3.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
45.3A
Drain Source On State Resistance
0.0128ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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