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SISS78LDN-T1-GE3
MOSFET, N-CH, 70V, 66.7A, POWERPAK 1212 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS78LDN-T1-GE3
Newark Part No.93AH0394
Product RangeTrenchFET Gen IV
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 31 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.550 |
| 10+ | $1.920 |
| 25+ | $1.780 |
| 50+ | $1.660 |
| 100+ | $1.530 |
| 250+ | $1.420 |
| 500+ | $1.300 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.55
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS78LDN-T1-GE3
Newark Part No.93AH0394
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds70V
Continuous Drain Current Id66.7A
Drain Source On State Resistance0.0058ohm
On Resistance Rds(on)0.0048ohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation57W
Power Dissipation Pd57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
70V
Drain Source On State Resistance
0.0058ohm
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation
57W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
66.7A
On Resistance Rds(on)
0.0048ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
Power Dissipation Pd
57W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability