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SQ2337ES-T1_BE3
Power MOSFET, P Channel, 80 V, 2.2 A, 0.29 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSQ2337ES-T1_BE3
Newark Part No.80AH8965
Product RangeTrenchFET Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ2337ES-T1_BE3
Newark Part No.80AH8965
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id2.2A
Drain Source On State Resistance0.29ohm
On Resistance Rds(on)0.241ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd3W
Power Dissipation3W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead
Product Overview
Notes
BE3 suffix indicates non China production - not subject to US import tariffs
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.29ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation Pd
3W
No. of Pins
3Pins
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Channel Type
P Channel
Continuous Drain Current Id
2.2A
On Resistance Rds(on)
0.241ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
3W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
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Product Compliance Certificate