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SQD40081EL_GE3
Power MOSFET, P Channel, 40 V, 50 A, 0.0085 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSQD40081EL_GE3
Newark Part No.81AC2813
Product RangeTrenchFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.700 |
| 10+ | $2.160 |
| 25+ | $2.140 |
| 50+ | $1.890 |
| 100+ | $1.660 |
| 250+ | $1.530 |
| 500+ | $1.420 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$2.70
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQD40081EL_GE3
Newark Part No.81AC2813
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id50A
On Resistance Rds(on)0.007ohm
Drain Source On State Resistance0.0085ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation71W
Power Dissipation Pd71W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.007ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
71W
No. of Pins
3Pins
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (21-Jan-2025)
Channel Type
P Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.0085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
71W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
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