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SQD50N10-8M9L_GE3
Power MOSFET, N Channel, 100 V, 50 A, 0.0089 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQD50N10-8M9L_GE3Copy
Newark Part No.76Y1518
Product RangeTrenchFET Series
Your Part Number
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQD50N10-8M9L_GE3Copy
Newark Part No.76Y1518
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0089ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
QualificationAEC-Q101
Product RangeTrenchFET Series
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
136W
Operating Temperature Max
175°C
Product Range
TrenchFET Series
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0089ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
AEC-Q101
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability