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SQS141ELNW-T1_GE3
MOSFET, P-CH/40V/101A/POWERPAK 1212-8SLW ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSQS141ELNW-T1_GE3
Newark Part No.47AK1694
Product RangeTrenchFET Gen IV Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.210 |
| 10+ | $1.520 |
| 25+ | $1.380 |
| 50+ | $1.240 |
| 100+ | $1.100 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$11.05
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQS141ELNW-T1_GE3
Newark Part No.47AK1694
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id101A
On Resistance Rds(on)0.0074ohm
Drain Source On State Resistance0.0074ohm
Transistor Case StylePowerPAK 1212-8SLW
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation192W
Power Dissipation Pd192W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeTrenchFET Gen IV Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0074ohm
Transistor Case Style
PowerPAK 1212-8SLW
Rds(on) Test Voltage
10V
Power Dissipation
192W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (07-Nov-2024)
Channel Type
P Channel
Continuous Drain Current Id
101A
Drain Source On State Resistance
0.0074ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
192W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability