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VSLY5850
Infrared Emitter, High Speed, 850 nm, 3 °, T-1 3/4 (5mm), 10 mW/Sr, 10 ns, 10 ns
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| Quantity | Price |
|---|---|
| 1+ | $1.920 |
| 10+ | $1.260 |
| 25+ | $1.150 |
| 50+ | $1.040 |
| 100+ | $0.928 |
| 500+ | $0.843 |
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Multiple: 1
$1.92
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Product Information
ManufacturerVISHAY
Manufacturer Part NoVSLY5850
Newark Part No.65T4007
Technical Datasheet
Peak Wavelength850nm
Angle of Half Intensity3°
Diode Case StyleT-1 3/4 (5mm)
Radiant Intensity (Ie)10mW/Sr
Rise Time10ns
Fall Time tf10ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.9V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (07-Nov-2024)
Product Overview
The VSLY5850 is a 850nm Infrared Emitting Diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed and moulded in a clear. It is suitable for high pulse current operation and good spectral matching with CMOS cameras. It is suitable for use in infrared radiation source for operation with CMOS cameras, high speed IR data transmission, smoke-automatic fire detectors and IR flash.
- Leads with stand-off
- High reliability
- High radiant power
- High radiant intensity
- ±3° Narrow angle of half intensity
Technical Specifications
Peak Wavelength
850nm
Diode Case Style
T-1 3/4 (5mm)
Rise Time
10ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
3°
Radiant Intensity (Ie)
10mW/Sr
Fall Time tf
10ns
Forward Voltage VF Max
1.9V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate