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VSML3710-GS08
Infrared Emitter, High Power, 940 nm, 60 °, LCC, 9.5 mW/Sr, 800 ns, 800 ns
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 9 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.280 |
Price for:Each (Supplied on Cut Tape)
Minimum: 7500
Multiple: 7500
$2,100.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoVSML3710-GS08
Newark Part No.31M2974
Technical Datasheet
Peak Wavelength940nm
Angle of Half Intensity60°
Diode Case StyleLCC
Radiant Intensity (Ie)9.5mW/Sr
Rise Time800ns
Fall Time tf800ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.35V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification StandardAEC-Q100
Product Range-
Product Overview
The VSML3710-GS08 is a 940nm Infrared Emitting Diode in GaAlAs multi quantum well (MQW) technology. It is moulded in a PLCC-2 package for surface mounting (SMD). It is suitable for use in IR emitter in photointerrupters, sensors and reflective sensors, IR emitter in low space applications, household appliance and tactile keyboards.
- High reliability
- High radiant power
- High radiant intensity
- ϕ = ±60° Angle of half sensitivity
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
Technical Specifications
Peak Wavelength
940nm
Diode Case Style
LCC
Rise Time
800ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
AEC-Q100
MSL
MSL 3 - 168 hours
Angle of Half Intensity
60°
Radiant Intensity (Ie)
9.5mW/Sr
Fall Time tf
800ns
Forward Voltage VF Max
1.35V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Alternatives for VSML3710-GS08
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate