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WNSC2D10650TJ
Silicon Carbide Schottky Diode, Single, 650 V, 10 A, 14 nC, DFN
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ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWNSC2D10650TJ
Newark Part No.37AJ9161
Technical Datasheet
No Longer Available
Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWNSC2D10650TJ
Newark Part No.37AJ9161
Technical Datasheet
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current10A
Total Capacitive Charge14nC
Diode Case StyleDFN
No. of Pins5 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCTo Be Advised
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
14nC
No. of Pins
5 Pin
Diode Mounting
Surface Mount
SVHC
To Be Advised
Diode Configuration
Single
Average Forward Current
10A
Diode Case Style
DFN
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate