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SCTH90N65G2V-7
Silicon Carbide MOSFET, Single, N Channel, 116 A, 650 V, 0.018 ohm, H2PAK
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTH90N65G2V-7Copy
Newark Part No.69AH2142
Your Part Number
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTH90N65G2V-7Copy
Newark Part No.69AH2142
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id116A
Drain Source Voltage Vds650V
On Resistance Rds(on)0.018ohm
Drain Source On State Resistance0.018ohm
Transistor Case StyleH2PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Power Dissipation Pd484W
Gate Source Threshold Voltage Max3.2V
Power Dissipation484W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.018ohm
No. of Pins
7Pins
Power Dissipation Pd
484W
Power Dissipation
484W
Product Range
-
SVHC
To Be Advised
MOSFET Module Configuration
Single
Continuous Drain Current Id
116A
On Resistance Rds(on)
0.018ohm
Transistor Case Style
H2PAK
Rds(on) Test Voltage
18V
Gate Source Threshold Voltage Max
3.2V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate