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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS138-7-F
Newark Part No.12T1442
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id200mA
On Resistance Rds(on)1.4ohm
Drain Source On State Resistance3.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd300mW
Gate Source Threshold Voltage Max1.2V
Power Dissipation300mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
BSS138-7-F is a 50V N-channel enhancement mode MOSFET with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic (UL94V-0). The MOSFET features low gate threshold voltage, fast switching speed and low input capacitance.
- Low on-resistance
- Low input/output leakage
- Halogen and antimony-free
- Green device
- Qualified to AEC-Q101 standards for high reliability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
50V
On Resistance Rds(on)
1.4ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
Drain Source On State Resistance
3.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
300mW
Power Dissipation
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for BSS138-7-F
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate