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DMN2013UFDE-7
MOSFET, N-CH, 20V, 10.5A, U-DFN2020 ROHS COMPLIANT: YES
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| Quantity | Price |
|---|---|
| 1+ | $0.940 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$0.94
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN2013UFDE-7
Newark Part No.36AJ3578
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id10.5A
On Resistance Rds(on)0.0084ohm
Drain Source On State Resistance0.0084ohm
Transistor Case StyleU-DFN2020
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.1V
Power Dissipation Pd2.03W
Power Dissipation2.03W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0084ohm
Transistor Case Style
U-DFN2020
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
2.03W
No. of Pins
6Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
10.5A
Drain Source On State Resistance
0.0084ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
Power Dissipation
2.03W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability