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DMN3025LFV-13
MOSFET, N-CH, 30V, 25A, POWERDI 3333
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN3025LFV-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8546
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 42 week(s)
| Quantity | Price |
|---|---|
| 5+ | $0.916 |
| 10+ | $0.565 |
| 25+ | $0.495 |
| 50+ | $0.429 |
| 100+ | $0.360 |
| 250+ | $0.317 |
| 500+ | $0.273 |
| 1000+ | $0.244 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$4.58
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN3025LFV-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8546
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id25A
On Resistance Rds(on)0.013ohm
Drain Source On State Resistance0.013ohm
Transistor Case StylePowerDI 3333
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation900mW
Power Dissipation Pd900mW
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.013ohm
Transistor Case Style
PowerDI 3333
Rds(on) Test Voltage
10V
Power Dissipation
900mW
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source On State Resistance
0.013ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
900mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate