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DMN61D8L-7
MOSFET, N-CH, 60V, 0.47A, SOT-23
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN61D8L-7Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8627
Your Part Number
Available to Order
| Quantity | Price |
|---|---|
| 5+ | $1.140 |
| 10+ | $0.723 |
| 25+ | $0.645 |
| 50+ | $0.566 |
| 100+ | $0.488 |
| 250+ | $0.437 |
| 500+ | $0.385 |
| 1000+ | $0.353 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.70
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN61D8L-7Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8627
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id470mA
Drain Source On State Resistance1.1ohm
On Resistance Rds(on)1.1ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd390mW
Power Dissipation390mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.1ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
5V
Power Dissipation Pd
390mW
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
470mA
On Resistance Rds(on)
1.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
390mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate