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ZVN4106F
Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.000 |
| 10+ | $0.841 |
| 25+ | $0.759 |
| 50+ | $0.691 |
| 100+ | $0.612 |
| 250+ | $0.554 |
| 500+ | $0.466 |
| 1000+ | $0.454 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
$5.00
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZVN4106F
Newark Part No.98K4104
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id200mA
Drain Source On State Resistance2.5ohm
On Resistance Rds(on)2.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd330mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation330mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The ZVN4106F is a 60V N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals solderable as per MIL-STD-202 standard, method 208.
- Maximum continuous drain current
- AEC-Q101 qualified
- UL94V-0 Flammability rating
Applications
Power Management, Motor Drive & Control, Audio, Automotive, Defence, Military & Aerospace
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2.5ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
330mW
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
On Resistance Rds(on)
2.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
330mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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