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Available to Order
Manufacturer Standard Lead Time: 15 week(s)
Quantity | Price |
---|---|
1+ | $1.700 |
10+ | $1.280 |
100+ | $0.919 |
500+ | $0.766 |
1000+ | $0.716 |
2500+ | $0.666 |
12000+ | $0.623 |
Price for:Each
Minimum: 1
Multiple: 1
$1.70
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZVP3306A
Newark Part No.98K4112
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id160mA
Drain Source On State Resistance14ohm
On Resistance Rds(on)14ohm
Transistor Case StyleE-Line
Transistor MountingThrough Hole
Power Dissipation Pd625mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation625mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The ZVP3306A is a P-channel enhancement mode Vertical DMOS FET.
- AEC-Q101 Qualified
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
14ohm
Transistor Case Style
E-Line
Power Dissipation Pd
625mW
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
160mA
On Resistance Rds(on)
14ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
625mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate